Study of Electron Velocity Overshoot in NMOS Inversion Layers
نویسندگان
چکیده
منابع مشابه
VELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS
Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDIC1 ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole ...
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ژورنال
عنوان ژورنال: VLSI Design
سال: 1998
ISSN: 1065-514X,1563-5171
DOI: 10.1155/1998/65364